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2SB860 Datasheet PDF

Hitachi 2SB860

Silicon PNP Transistor

Part No. 2SB860
Datasheet 2SB860 Download
Manufacturer
Hitachi
Description Silicon PNP Transistor
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2SB860 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 1 Rating –100 –100 –4 –4 –5 1.8 40 150 –45 to +150 Unit V V V A A W W °C °C 2SB860

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Symbol Min –100 –4 — — — 50 25 Note: 1. Pulse test Typ — — — — — — — Max — — –100 –50 –1.0 250 350 Unit V V µA µA V Test conditions I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCE = –80 V, RBE = ∞ VEB = –3.5 V, IC = 0 I C = –1 A, IB = –0.1 A*1 VCE = –4 V I C = –0.5 A*1 I C = –50 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio V(BR)EBO I CEO I EBO VCE(sat) hFE Maximum Collector Dissepation Curve 60 Collector pow...
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