Hitachi 2SC2734
Silicon NPN Transistor
| Part No. | 2SC2734 |
|---|---|
| Datasheet | 2SC2734 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 11 3 — — 20 1.4 — — Typ — — — — — 90 3.5 0.9 15 Max — — — 0.5 0.7 200 — 1.5 — GHz pF dB Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 I C = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 6 V, IC = 2 mA, f = 900 MHz, f OSC = 930 MHz (0dBm), f out = 30 MHz VCC = 6 V, IC = 2 mA, f = 900 MHz, f OSC = 930 MHz (0dBm), f out = 30 MHz VCC = 6 V, IC = 5 mA, f = 930 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Colle...
