Renesas Electronics 2SC2734
Silicon NPN Transistor
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 11 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 7 Free Datasheet 2SC2734ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Conversion gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO VCE(sat) hFE fT Cob CG Min 20 11 3 — — 20 1.4 — — Typ — — — — — 90 3.5 0.9 15 Max — — — 0.5 0.7 200 — 1.5 — Unit V V V µA V GHz pF dB Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 IC = 10 mA, IB = 5 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC =...