Hitachi 2SC4260
Silicon NPN Transistor
| Part No. | 2SC4260 |
|---|---|
| Datasheet | 2SC4260 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 100 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain Noise figure Note: Marking is “TI–”. I EBO VCE(sat) hFE Cob fT CG NF Min 25 — — — — 50 — 3.0 — — Typ — — — — — — 0.85 3.8 19 8 Max — 0.1 10 0.3 0.3 180 1.3 — — — pF GHz dB dB Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 13 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 5 mA VCC = 5 V, IC = 0.8 mA, f = 900 MHz f OSC = 930 MHz (–5dBm), f out = 30 MHz See characteristic curves of 2SC4197.
