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2SC4308 Datasheet PDF

Hitachi 2SC4308

Silicon NPN Transistor

Part No. 2SC4308
Datasheet 2SC4308 Download
Manufacturer
Hitachi
Description Silicon NPN Transistor
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2SC4308 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 30 20 3 300 500 600 150 –55 to +150 Unit V V V mA mA mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE fT Cob Min 30 20 — — 50 1.5 — Typ — — — — — 2.5 4.0 Max — — 1 10 200 — — GHz pF Unit V V µA µA Test conditions I C = 100 µA, IE = 0 I C = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4308 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 200 0 5 4.
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