Renesas Electronics 2SC4308
Silicon NPN Transistor
| Part No. | 2SC4308 |
|---|---|
| Datasheet | 2SC4308 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC (peak) PC Tj Tstg Ratings 30 20 3 300 500 600 150 –55 to +150 Unit V V V mA mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Free Datasheet 2SC4308ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE fT Cob Min 30 20 — — 50 1.5 — Typ — — — — — 2.5 4.0 Max — — 1 10 200 — — Unit V V µA µA GHz pF Test conditions IC = 100 µA, IE = 0 IC = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz Rev.2.00 Aug 10, 2005 page 2 of 5 Free Datasheet 2SC4308 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 200 Typical Output Characteristics 0 5 4.
