Datasheet Details
| Part number | 2SC4308 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4308-INCHANGE.pdf |
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Overview: isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4308.
| Part number | 2SC4308 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 172.36 KB |
| Description | NPN Transistor |
| Datasheet | 2SC4308-INCHANGE.pdf |
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·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF wide band amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 300 mA ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 500 mA 0.6 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4308 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA ;
Compare 2SC4308 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC4308 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SC4308 | Silicon NPN Transistor | Renesas |
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