Datasheet4U Logo Datasheet4U.com

2SC4308 Datasheet

The 2SC4308 is a Silicon NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SC4308
ManufacturerHitachi Semiconductor
Overview 2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base. = 50 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4308 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 200 0 5 4. 3. 3.0 2.5 2.0 1.5 100 0.1 400 200 0.5mA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 1.0 2.0.
Part Number2SC4308
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF wide band ampli. mitter Breakdown Voltage IC= 1mA ; RBE= ∞ 20 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 1 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 10 μA hFE DC Current Gain IC= 50mA ; VCE= 5V 50 200 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 5V 1.5 2.5 GHz COB Output Capacita.
Part Number2SC4308
DescriptionSilicon NPN Transistor
ManufacturerRenesas
Overview 2SC4308 Silicon NPN Epitaxial Planar REJ03G0723-0200 (Previous ADE-208-1103) Rev.2.00 Aug.10.2005 Application VHF Wide band amplifier Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 . — — — — 2.5 4.0 Max — — 1 10 200 — — Unit V V µA µA GHz pF Test conditions IC = 100 µA, IE = 0 IC = 1 mA, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 mA VCE = 5 V, IC = 50 mA VCB = 10 V, IE = 0, f = 1 MHz Rev.2.00 Aug 10, 2005 page 2 of 5 Free Datasheet http://www.datasheet4u..

Similar Datasheets

Part Number Manufacturer Description
C4308 Renesas 2SC4308