2SC4308
2SC4308 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial Planar
Application
VHF Wide band amplifier
Outline
TO-92 (2)
1. Base 2. Emitter 3. Collector 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C (peak) PC Tj Tstg Ratings 30 20 3 300 500 600 150
- 55 to +150 Unit V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Gain bandwidth product Collector output capacitance Symbol V(BR)CBO V(BR)CEO I CBO I EBO h FE f T Cob Min 30 20
- - 50 1.5
- Typ
- -
- -
- 2.5 4.0 Max
- - 1 10 200
- - GHz p F Unit V V µA µA Test conditions I C = 100 µA, IE = 0 I C = 1 m A, RBE = ∞ VCB = 25 V, IE = 0 VEB = 3 V, IE = 0 VCE = 5 V, IC = 50 m A VCE = 5 V, IC = 50 m A VCB = 10 V, IE = 0, f = 1 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 600 Collector Current IC (m A) Typical Output Characteristics 200
0 5 4. 3.
2.0 1.5 100 0.1
0.5m A
IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 1.0 2.0 Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current 1,000 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio h FE VCE = 5 V Pulse Test Ta = 75°C 100 25
- 25 10
Base to Emitter Voltage vs. Collector Current VCE = 5 V Pulse Test
Ta =
- 25°C 1.0 75
10 1 10 100 Collector Current IC (m A) 1,000
0.1 1 10 100 Collector Current IC (m A) 1,000
Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 1.0 Ta = 75°C 25 Gain Bandwidth Product f T (MHz) 10,000 VCE = 5 V Gain Bandwidth Product vs. Collector Current
- 25 IC = 10 IB Pulse Test 0.01 1 10 100 Collector Current IC (m A)...
