Datasheet4U Logo Datasheet4U.com

2SC5461 - Silicon NPN Transistor

Key Features

  • High breakdown voltage VCBO = 1500 V.
  • High speed switching tf = 0.15 µsec(typ. ) at fH=64kHz.
  • Isolated package TO.
  • 3PFM Outline TO.
  • 3PFM ADE-208-630 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Sto.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5460 NPN TRANSISTOR Toshiba Semiconductor
2SC5463 NPN TRANSISTOR Toshiba Semiconductor
2SC5463 Silicon NPN RF Transistor Inchange Semiconductor
2SC5464 NPN TRANSISTOR Toshiba Semiconductor
2SC5464FT NPN TRANSISTOR Toshiba Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SC5462 Silicon NPN Transistor
2SC5469 Silicon NPN Transistor
2SC5470 Silicon NPN Triple Diffused Planar Transistor
2SC5025 Silicon NPN Transistor
2SC5068A Silicon NPN Triple Diffused Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SC5461 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz • Isolated package TO–3PFM Outline TO–3PFM ADE-208-630 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5461 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Symbol VCBO Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.