Hitachi 2SC5461
Silicon NPN Transistor
| Part No. | 2SC5461 |
|---|---|
| Datasheet | 2SC5461 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCBO = 1500 V● High speed switching tf = 0.15 µsec(typ.) at fH=64kHz
● Isolated package TO–3PFM Outline TO–3PFM ADE-208-630 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5461
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Symbol VCBO Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C VCEO VEBO IC ic(peak) P Note1 C Tj Tstg Ratings 1500 700 6 15 30 50 150 –55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current I CES DC current transfer ratio hFE1 DC current transfer ratio hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) Fall time tf Min 700 6 — 10 3.5 — — — Fall time tf — Typ —...
