Hitachi 2SC5469
Silicon NPN Transistor
FEATURES
● High breakdown voltage VCBO = 1500 V● High speed switching tf = 0.15 µsec (typ.) at fH = 64kHz Outline 3rd. Edition December 1997 Target Specification Downloaded from Elcodis.com electronic components distributor 2SC5469
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) P Note1 C Tj Tstg Ratings 1500 700 6 15 30 125 150 –55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current I CES DC current transfer ratio hFE1 DC current transfer ratio hFE2 Collector to emitter saturation VCE(sat) voltage Base to emitter saturation voltage VBE(sat) Fall time tf Min 700 6 — 10 3.5 — — — Fall time tf — Typ — —...