Hitachi 2SC5462
Silicon NPN Transistor
| Part No. | 2SC5462 |
|---|---|
| Datasheet | 2SC5462 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage VCBO = 1500 V● High speed switching tf = 0.15 µsec(typ.) at fH=64kHz
● Isolated package TO–3PFM Outline TO–3PFM ADE-208-671 (Z) 1st. Edition Oct. 1, 1998 1 2 3 1. Base 2. Collector 3. Emitter 2SC5462
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) P Note1 C Tj Tstg Ratings 1500 700 6 20 40 50 150 –55 to +150 Unit V V V A A W °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Symbol V(BR)CEO V(BR)EBO I CES hFE1 hFE2 VCE(sat) VBE(sat) tf Min 700 6 — 10 3.5 — — — Fall time tf — Typ —...
