Hitachi 2SD1470
Silicon NPN Epitaxial Planar Transistor
| Part No. | 2SD1470 |
|---|---|
| Datasheet | 2SD1470 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 60 60 7 1 2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 60 60 7 — — 2000 — — Typ — — — — — — — — Max — — — 10 10 100000 1.5 2.0 V V Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 60 V, IE = 0 VEB = 7 V, IC = 0 VCE = 3 V, IC = 0.5 A*1 I C = 500 mA, IB = 0.5 mA*1 I C = 500 mA, IB = 0.5 mA*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1.
