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2SD1471 Datasheet PDF

Hitachi 2SD1471

The 2SD1471 is grouped by h FE as follows.
Part No. 2SD1471
Datasheet 2SD1471 Download
Manufacturer
Hitachi
Description Silicon NPN Planar Transistor
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2SD1471 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 40 30 10 300 500 1 150 –55 to +150 Unit V V V mA mA W °C °C Notes: 1. Pulse ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 40 30 10 — — 1 Typ — — — — — — — — — — Max — — — 1 10 100000 — — 1.5 2.0 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 30 V, IE = 0 VCE = 24 V, RBE = ∞ VCE = 5 V, IC = 10 mA*2 VCE = 5 V, IC = 100 mA*2 VCE = 5 V, IC = 400 mA*2 I C = 100 mA, IB = 0.1 mA*2 I C = 100 mA, IB = 0.1 mA*2 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)E...
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