Hitachi 2SD1472
Silicon NPN Epitaxial Planar Transistor
| Part No. | 2SD1472 |
|---|---|
| Datasheet | 2SD1472 Download |
| Manufacturer |  Hitachi |
| Description | Silicon NPN Epitaxial Planar Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature E to C diode forward current Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg ID 2 1 Ratings 120 120 7 1.5 3.0 1.0 150 –55 to +150 1.5 Unit V V V A A W °C °C A Notes: 1. Pluse ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 120 7 — — 2000 — — — — — Typ — — — — — — — — — — — Max — — — 1.0 10 30000 1.5 2.0 2.0 2.5 3.0 V V V V V Unit V V V µA µA Test conditions I C = 0.1 mA, IE = 0 I C = 10 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 100 V, IE = 0 VCE = 100 V, RBE = ∞ VCE = 3 V, IC = 1 A*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I C = 1 A, IB = 1 mA*1 I C = 1.5 A, IB = 1.5 mA*1 I D = 1.5 A*1 Collector to emitter breakdow...
