Hitachi 2SK3000
Silicon N-Channel MOSFET
| Part No. | 2SK3000 |
|---|---|
| Datasheet | 2SK3000 Download |
| Manufacturer |  Hitachi |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS(on) = 0. 25Ω typ. (V GS = 10 V, ID = 450 mA)● 4V gate drive devices.
● Small package (MPAK)
● Expansive drain to source surge power capability Outline MPAK 3 1 D 3 2 2 G 1. Source 2. Gate 3. Drain S 1 2SK3000
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 Unit V V A A A mW °C °C 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt )ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Drain to source voltage Gate to source breakdown voltage Symbol V(BR)DSS VDS(SUS) V(BR)GSS Min 40 40 ±10 — — 1.1 — Typ — — — — — — 0.3 Max 60 — — 1.0 ±5 2.1 0.5 Unit V V V µA µA V Ω Ω S pF pF pF µs µs µs µs Test Conditions I D = 100µA, VGS = 0...
