Renesas Electronics 2SK3000
Silicon N-Channel MOSFET
| Part No. | 2SK3000 |
|---|---|
| Datasheet | 2SK3000 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance RDS(on) = 0.16 Ω typ. (VGS = 10 V, ID = 450 mA)● 4 V gate drive devices.
● Small package (MPAK)
● Expansive drain to source surge power capability Outline MPAK D 3 3 2 G 1 S Note: Marking is “ZY–”. Data Sheet R07DS1134EJ0400 Rev.4.00 Jan 10, 2014 1 2 1. Source 2. Gate 3. Drain
ABSOLUTE MAXIMUM RATINGS
Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Reverse drain current Channel dissipation IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1 % 2. When using the glass epoxy board (10 mm x 10 mm x 1 mmt ) Ratings 40 ±10 1.0 4.0 1.0 400 150 –55 to +150 (Ta = 25°C) Unit V V A A A mW °C °C R07DS1134EJ0400 Rev.4.00 Jan 10, 2014 Page 1 of 7 2SK3000ELECTRICAL CHARACTERISTICS
Item Symbol Min Drain to source breakdown voltage V(BR)DSS 40 Drain to source voltage VDS(SUS) 40 Gate to source breakdown voltage V(BR)GSS ±10 Zero gate voltage drain curren...
