Hitachi 2SK3147S
N-Channel MOSFET
| Part No. | 2SK3147S |
|---|---|
| Datasheet | 2SK3147S Download |
| Manufacturer |  Hitachi |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Low on-resistance R DS = 0.1 Ω typ.● High speed switching
● 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2 1 2 G 1 3 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3147(L),2SK3147(S)
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 5 20 5 5 2.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 ΩELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 100 ±20 — — 1.0 — — 3.5 — — — — — — — — — Typ — — — — — 0.1 0.13 6 420 185 100 10 35 110 60 0.85 85 Max — — ±10 10 2.5 0.13 0.18 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 5 A, VGS...
