Hitachi BB403M
BB403M is individual type number of HITACHI BBFET.| Part No. | BB403M |
|---|---|
| Datasheet | BB403M Download |
| Manufacturer |  Hitachi |
| Description | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
● Build in Biasing Circuit; To reduce using parts cost & PC board space.● High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
● Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
● Provide mini mold packages; MPAK-4R (SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “CX–”. 2. BB403M
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 7 – 0/ +7 – 0/ +7 25 150 150 –55 to +150 Unit V V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min 7 +7 +7 — — 0.3 0.5 9 35 Typ — — — — — 0.6 0.8 14 42 Max — — — +100 +100 0.9 1.1 20 50 Unit V V V nA nA V V mA mS Test Conditions I D = 200µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = +10 µA VG1S = VDS = 0 VG1S = +5V VG2S = V...
