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BB403M

Manufacturer: Hitachi Semiconductor (now Renesas)

BB403M datasheet by Hitachi Semiconductor (now Renesas).

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BB403M Datasheet Details

Part number	BB403M
Datasheet	BB403M_HitachiSemiconductor.pdf
File Size	74.90 KB
Manufacturer	Hitachi Semiconductor (now Renesas)
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB403M Overview

BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699A (Z) 2nd.

BB403M Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space
High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions
Provide mini mold packages; MPAK-4R (SOT-143 var.)

More Datasheets from Hitachi Semiconductor (now Renesas)

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Part Number	Description
BB403	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
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BB404	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB404M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB405	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
BB405M	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

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