BB403M
Overview
- Build in Biasing Circuit; To reduce using parts cost & PC board space.
- High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
- Provide mini mold packages; MPAK-4R (SOT-143 var.) Outline MPAK-4R 3 4 2 1
- Source
- Drain
- Gate2
- Gate1 Notes:
- Marking is “CX-”.
- BB403M is individual type number of HITACHI BBFET. BB403M
