BB403M Datasheet Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699A (Z) 2nd. Edition Nov.

Datasheet Details

Part number	BB403M
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	74.90 KB
Description	Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Datasheet	BB403M_HitachiSemiconductor.pdf

Key Features

Build in Biasing Circuit; To reduce using parts cost & PC board space.
High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz).
Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4R (SOT-143 var. ) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “CX.
”. 2. BB403M is individual type number of.

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