BB403M Description
BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699A (Z) 2nd.
BB403M Key Features
- Build in Biasing Circuit; To reduce using parts cost & PC board space
- High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
- Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions
- Provide mini mold packages; MPAK-4R (SOT-143 var.)