Hitachi BB503M
BB503M is individual type number of HITACHI BBFET.| Part No. | BB503M |
|---|---|
| Datasheet | BB503M Download |
| Manufacturer |  Hitachi |
| Description | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier |
| Buy | Stock & Price |
FEATURES
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● Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
● Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “CS–”. BB503M
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 Gate2 to source voltage +6 –0 Drain current Channel power dissipation Channel temperature Storage temperature 20 150 150 –55 to +150 mA mW °C °C V Unit V VELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 +6 — — 0.5 0.5 7 19 Typ — — — — — 0.7 0.7 10 24 Max — — — +100 +100 1.0 1.0 13 29 Unit V...
