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BB503M Datasheet Build In Biasing Circuit Mos Fet Ic Uhf/vhf Rf Amplifier

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811B(Z) 3rd. Edition Jul.

Key Features

  • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. 2. Marking is “CS.
  • ”. BB503M is individual type number of HITAC.

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More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
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