BB503M
Overview
- Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
- Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4
- Source
- Gate1
- Gate2
- Drain Notes: 1.
- Marking is “CS-”. BB503M is individual type number of HITACHI BBFET. BB503M
