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HL6323MG - AlGaInP Laser Diode

General Description

The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure.

It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors.

Key Features

  • High output power Visible light output Small package TM mode oscillation : 35 mW (CW) : λp = 639 nm Typ : φ5.6 mm Pakage Type.
  • HL6323MG: MG Internal Circuit 1 3 PD LD 2 HL6323MG Absolute Maximum Ratings (TC = 25°C ± 3°C) Item Optical output power Optical output power (Puise) LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO PO VR(LD) VR(PD) Topr Tstg Value 35.
  • 50.
  • 2 30.
  • 10 to +50.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HL6323MG AlGaInP Laser Diode ADE-208-1410 (Z) 1st Edition Mar. 2001 Description The HL6323MG is a 0.63 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a longer distance operating range for laser markers and a higher speed for positioning control sensors. The HL6323MG is packaged in the small can (φ5.6 mm), enabling end products to be kept small. Application • Laser markers • Measurement equipment Features • • • • High output power Visible light output Small package TM mode oscillation : 35 mW (CW) : λp = 639 nm Typ : φ5.