Hitachi HSC119
Silicon Epitaxial Planar Diode for High Speed Switching
| Part No. | HSC119 |
|---|---|
| Datasheet | HSC119 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Diode for High Speed Switching |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C=2.0pF max)● Short reverse recovery time. (trr =3.0ns max)
● Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HSC119 Laser Mark H1 Package Code UFP Outline Cathode mark Mark 1 H1 2 1. Cathode 2. Anode HSC119
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Average forward current Peak rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRM VR IO I FM I FSM Tj Tstg *1 Value 85 80 100 300 4 125 –55 to +125 Unit V V mA mA A °C °C 1. Within 1µs forward surge current.ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time*1 IR C t rr Min — — — — — Typ — — — — — Max 0.8 1.2 0.1 2.0 3.0 µA pF ns Unit V Test Condition I F = 10 mA I F = 100 mA VR = 80V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V RL=50Ω Notes 1. Reverse recovery time test circuit DC Supply 0.1...
