Kexin Electronics HSC119
High Speed Switching Diodes
FEATURES
● Low capacitance. (C = 2.0 pF max)● Short reverse recovery time. (trr = 3.0 ns max)
● Ultra small Flat Package (UFP) is suitable for surface mount design. +0.05 0.8 -0.05 SOD-523 1.2 +0.1 -0.1 + +0.05 0.3 -0.05 Unit:mm 0.6 +0.1 -0.1 - 1.6 +0.1 -0.1 0.77max +0.05 0.1 -0.02 0.07max
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Reverse voltage Forward current Peak forward surge current Junction Temperature Storage temperature range Symbol Rating Unit VRM 85 V IF 100 mA IFM 300 TJ 125 ℃ Tstg -55 to 125●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Reverse breakdown voltage Forward voltage Reverse voltage leakage current Junction capacitance Reverse recovery time Symbol Test Conditions VR IR= 100 uA VF1 IF= 10mA VF2 IF= 100mA IR1 VR= 80V Cj VR= 0V, f= 1 MHz trr IF=10mA, VR=6V,RL=50Ω Min Typ Max Unit 85 0.8 V 1.2 0.1 uA 2 pF 3 ns Marking Marking A 1 SMD Type High Speed Switching Diodes HSC119 (KSC119) Diodes● Typical Characterisitics Forward current IF (A) TTaaT=a=-=22575°°5°CCC Reverse current IR (A) 1.0 10–1 10–2 10–3 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) Fig.1 Forward current vs.