Hitachi HSC276
Silicon Schottky Barrier Diode for Mixer
| Part No. | HSC276 |
|---|---|
| Datasheet | HSC276 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode for Mixer |
| Buy | Stock & Price |
FEATURES
● High forward current, Low capacitance.● Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C — Min 3 — 35 — 30 Typ — — — — — Max — 50 — 0.85 — Unit V µA mA pF V Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 100µA at VR =0.5 V 2 HSC276 Main Characteristic -2 10 -2 10 Reverse current I R (A) Forward current IF (A) 10 -3 10 -3 10 -4 10 -4 10 -5 10 -5 10-6 0 0.1 0.2 0.3 0.4 10 -6 0 1 2 3 4 5 Forward voltage V F (V) Fig.1 Forward current Vs.
