HSC276 Datasheet Silicon Schottky Barrier Diode

Manufacturer: Renesas

Overview: HSC276 Silicon Schottky Barrier Diode for Detector and Mixer REJ03G0134-0200Z (Previous: ADE-208-421A) Rev.2.00 Nov.10.

Datasheet Details

Part number	HSC276
Manufacturer	Renesas
File Size	168.78 KB
Description	Silicon Schottky Barrier Diode
Datasheet	HSC276-Renesas.pdf

High forward current, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value Unit 3 V 30 mA 125 °C.

Part Number	Description	Manufacturer
HSC276	Silicon Schottky Barrier Diode for Mixer	Hitachi Semiconductor
HSC276	Silicon Schottky Barrier Diode	Kexin
HSC276A	Silicon Schottky Barrier Diode for Mixer	Hitachi Semiconductor

Part Number	Description
HSC276A	Silicon Schottky Barrier Diode
HSC226	Silicon Schottky Barrier Diode