Renesas Electronics HSC276
Silicon Schottky Barrier Diode
HSC276 Specifications
- Terminals : 2
- Max Operating Temp : 125°C
Source:
Octopart
| Part No. | HSC276 |
|---|---|
| Datasheet | HSC276 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● High forward current, Low capacitance.● Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Pin Arrangement Cathode mark Mark 1 C2 2 1. Cathode 2. Anode Rev.2.00, Nov.10.2003, page 1 of 4 HSC276
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value Unit 3 V 30 mA 125 °C –55 to +125 °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR 3 ——V IR = 1 mA Reverse current IR — — 50 µA VR = 0.5 V Forward current IF 35 — — mA VF = 0.5 V Capacitance C — — 0.85 pF VR = 0.5 V, f = 1 MHz ESD-Capability *1 — 30 — — V C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse. Note: 1. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V Rev.2.00, Nov.10.2003, page 2 of 4 HSC276 Main Characteristics 10–1 10–2 Forward current IF (A) 10–3 10–4 Ta = 75˚C Ta = 25˚C 10–5 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current vs.
