HSC276
HSC276 is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- High forward current, Low capacitance.
- Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC276
Laser Mark C2
Package Code UFP
Pin Arrangement
Cathode mark Mark
1 C2 2
1. Cathode 2. Anode
Rev.2.00, Nov.10.2003, page 1 of 4
Absolute Maximum Ratings
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature
Symbol VR IO Tj Tstg
Value
Unit
30 m A
°C
- 55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Reverse voltage
- - V
IR = 1 m A
Reverse current
- -
µA VR = 0.5 V
Forward current
- - m A VF = 0.5...
