HSC276
HSC276 is Silicon Schottky Barrier Diode manufactured by Kexin Semiconductor.
Features
High forward current, Low capacitance. Ultra small Flat Package (UFP) is suitable for surface mount design.
+0.05 0.8 -0.05
SOD-523
1.2+0.1 -0.1
+
+0.05 0.3 -0.05
Unit: mm 0.6+0.1
-0.1
- 1.6+0.1 -0.1
0.77max
+0.05 0.1 -0.02
0.07max
A bsolute M axim um R atings T a = 25
P aram eter R everse V oltage A verage rectified current Junction tem perature S torage tem perature
Sym bol VR IO Tj T stg
V alue 3 30
125 -55 to +125
U nit V m A
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
M in
Reverse voltage
IR = 10 A
Reverse current
VR = 0.5 V
Forward voltage
VR = 0.5 V
Capacitance
VR = 0.5 V, f = 1 MHz
ESD-Capability (Note 1)
C=200p F , Both forward and 30 reverse direction 1...