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HSC276 - Silicon Schottky Barrier Diode for Mixer

Key Features

  • High forward current, Low capacitance.
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reve.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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HSC276A Silicon Schottky Barrier Diode for Mixer
HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1. Cathode 2. Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C — Min 3 — 35 — 30 Typ — — — — — Max — 50 — 0.85 — Unit V µA mA pF V Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.