HSC276A
HSC276A is Silicon Schottky Barrier Diode manufactured by Renesas.
Features
- High forward current, Low capacitance.
- Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC276A
Laser Mark S5
Package Name UFP
REJ03G0600-0100 (Previous: ADE-208-836)
Rev.1.00 Apr 13, 2005
Package Code (Previous Code) PWSF0002ZA-A
(UFP)
Pin Arrangement
Cathode mark Mark
1 S5 2
1. Cathode 2. Anode
Rev.1.00 Apr 13, 2005 page 1 of 4
Absolute Maximum Ratings
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature
VRRM VR IO Tj Tstg
Symbol
Value 5 3 30
- 55 to +125
(Ta = 25°C) Unit
V V m A °C °C
Electrical Characteristics
Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability
- Symbol Min
Typ
- IR
- -
- C
- -
- 30
- Note: Failure criterion ; IR ≥ 100 µA at VR = 0.5 V
Max
- 50
-...
