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HSC276A - Silicon Schottky Barrier Diode for Mixer

Key Features

  • High forward current, Low capacitance.
  • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276A Laser Mark S5 Package Code UFP Outline Cathode mark Mark 1 S5 2 1. Cathode 2. Anode HSC276A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 -55 to +125 Unit V V mA °C °C Elect.

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HSC276 Silicon Schottky Barrier Diode for Mixer
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HSC276A Silicon Schottky Barrier Diode for Mixer ADE-208-836(Z) Rev 0 Feb. 2000 Features • High forward current, Low capacitance. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HSC276A Laser Mark S5 Package Code UFP Outline Cathode mark Mark 1 S5 2 1. Cathode 2. Anode HSC276A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VRRM VR IO Tj Tstg Value 5 3 30 125 -55 to +125 Unit V V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C − Min 3 − 35 − 30 Typ − − − − − Max − 50 − 0.