Hitachi HSM88AS
Silicon Schottky Barrier Diode for Balanced Mixer
| Part No. | HSM88AS |
|---|---|
| Datasheet | HSM88AS Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode for Balanced Mixer |
| Buy | Stock & Price |
FEATURES
● Proof against high voltage.● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88AS Laser Mark C1 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM88AS
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO *1 Value 10 15 125 –55 to +125 Unit V mA °C °C Tj TstgELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Symbol Min VF1 VF2 Reverse current I R1 I R2 Capacitance Capacitance deviation Forward voltage deviation ESD-Capability *1 Typ — — — — — — — — Max 420 580 0.2 10 0.85 0.10 10 — Unit mV µA Test Condition I F = 1 mA I F = 10 mA VR = 2V VR = 10V 350 500 — — — — — 30 C ∆C ∆ VF — pF pF mV V VR = 0V, f = 1 MHz VR = 0V, f = 1 MHz I F = 10 mA C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V 2 HSM88AS Main Characteristic 10-2...
