Renesas Electronics HSM88AS
Silicon Schottky Barrier Diode
| Part No. | HSM88AS |
|---|---|
| Datasheet | HSM88AS Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● Proof against high voltage.● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM88AS Laser Mark C1 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2 Rev.6.00, Nov.06.2003, page 1 of 4 HSM88AS
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VR IO *1 Tj Tstg Value Unit 10 V 15 mA 125 °C –55 to +125 °CELECTRICAL CHARACTERISTICS
*1 (Ta = 25°C) Item Symbol Min Typ Forward voltage Reverse current Capacitance VF1 0.35 — VF2 0.50 — IR1 —— IR2 —— C —— Capacitance deviation ∆C —— Forward voltage deviation ∆VF ESD-Capability *2 — —— 30 — Notes: 1. Per one device 2. Failure criterion ; IR ≥ 0.4 µA at VR = 2 V Max 0.42 0.58 0.2 10 0.85 0.10 10 — Unit V µA pF pF mV V Test Condition IF = 1 mA IF = 10 mA VR = 2 V VR = 10 V VR = 0 V, f = 1 MHz VR = 0 V, f = 1 MHz IF = 10 mA C = 200 pF, R = 0 Ω , Both forward and reverse direction 1 pulse.
