Kexin Electronics HSM88AS
Schottky Diodes
FEATURES
ƽ Proof against high voltage. ƽ Suitable for high density surface mounting and high speed assembly. 3 1 2 (Top View) +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1. Anode 1 2. Cathode 2 3. Cathode 1 Anode 2 0-0.1 +0.1 0.38 -0.1 ƵABSOLUTE MAXIMUM RATINGS
(Ta = 25ć) Parameter Symbol Value Unit Reverse Voltage VR 10 V Average rectified current (Note 1) IO 15 mA Junction Temperature Storage Temperature Tj 125 ć Tstg -55 to 125 ƵELECTRICAL CHARACTERISTICS
(Ta = 25ć) Parameter Forward voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation Symbol Test Conditions VF1 IF = 1 mA VF2 IF = 10 mA IR1 VR = 2 V IR2 VR = 10 V C VR = 0 V, f = 1 MHz ǻC VR = 0 V, f = 1 MHz ǻVF IF = 10 mA ESD-Capability (Note 2) Note 1. Per one device 2. Failure criterion ; IR ı 0.4 μA at VR = 2 V C = 200 pF, R = 0 , Both forward and reverse direction 1 pulse. Min Typ Max Unit 0.3...