Hitachi MBM200GS6AW
IGBT POWER MODULE
| Part No. | MBM200GS6AW |
|---|---|
| Datasheet | MBM200GS6AW Download |
| Manufacturer |  Hitachi |
| Description | IGBT POWER MODULE |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBM200GS6AW 600 ±20 200 400 200 400 600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) 1.96(20) DC 1ms DC 1ms 12 17 25 35 (1) Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting (2) (3) Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 1.67N.m(17kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=600V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 1.9 2.5 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 9,700 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.4 VCC=300V ms Turn On Time ton 0.3 0.6 RL=1.5W...
