The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
IGBT MODU ODULE
MBM200GS6AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
94 4-Fast-on Terminal #110
G2 E2
FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
3-M5 2- φ 5.6
16
80 16
E2
16
C1
E1
C2E1
G1
23
7 12 6 35
23 39.5 φ 0.8
30
C2E1
G2 E2 E2 C1 E1 G1
Weight: 200 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.m (kgf.cm)
MBM200GS6AW
600 ±20 200 400 200 400 600 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.96(20) 1.
MBM200GS6AW Datasheet
