Datasheet4U Logo Datasheet4U.com

MBN400C20 - IGBT Module / Silicon N Channel IGBT

Features

  • High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).
  • low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
  • High speed,low loss IGBT module.
  • Low driving power due to low input capacitance MOS gate.
  • High reliability,high durability module.
  • Isolated head sink (terminal to base). Weight: 350 (g) E E G C.

📥 Download Datasheet

📁 Similar Datasheet

  • MBNP01Q40Q8 - Complex Transistors (CYStech Electronics)
  • MBNP2026G6 - N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device (CYStech Electronics)
  • MBNP2074G6 - N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device (CYStech Electronics)
Other Datasheets by Hitachi

Full PDF Text Transcription

Click to expand full text
IGBT MODULE MBN400C20 Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base). Weight: 350 (g) E E G C TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m MBN400C20 2,000 ±20 400 800 400 800 3,000 -40 ~ +125 -40 ~ +125 4,000(AC 1 minute) 2/10 2.
Published: |