MBN400C20 Datasheet | Hitachi Semiconductor

FEATURES - High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) - low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). - High speed,low loss IGBT module. - Low driving power due to low input capacitance MOS gate. - High reliability,high durability module. - Isolated head sink (terminal to base). Weight: 350 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m 2,000 ±20 400 800 400 800 3,000 -40 ~ +125 -40 ~ +125 4,000(AC 1 minute) 2/10 2.8 DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M5) (1) (2) Notes: (1)Remended Value 1.8±0.2/9±1N.m (2)Remended Value 2.6±0.2N.m CHARACTERISTICS Item (Tc=25°C ) Symbol I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr Unit m A n A V V n F Min. - Typ. 4.2 5.1 46 1.4 1.7 1.8 4.0 2.4 0.5 Max. 4.0 ±200 5.2 7.0 100 2.3 2.6 2.4 5.9 3.4 0.9 Test Conditions Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time VCE=2,000V,VGE=0V VGE=±20V,VCE=0V IC=400A,VGE=15V VCE=10V, IC =400m A VCE=10V,VGE=0V,f=100KHz VCC=1,000V,Ic=400A ms L=200n H RG=12W (3) VGE=±15V Tc=125°C -Ic=400A,VGE=0V V ms Vcc=1,000V,-Ic=400A,L=200n H, Tc=125°C (4) °C/W Thermal Impedance IGBT Rth(j-c) 0.033 Junction to case FWD Rth(j-c) 0.10 Notes:(3) RG value is the test condition’s value for decision of the switching times, not remended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. (4) Counter arm IGBT VGE=-15V PDE-N400C20-0 1000 Tc=25°C TYPICAL VGE=15V 14V...