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MBN400C33A - IGBT Module / Silicon N Channel IGBT

Features

  • High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles).
  • low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD).
  • High speed,low loss IGBT module.
  • Low driving power due to low input capacitance MOS gate.
  • Isolated head sink (terminal to base). E E G C 2-M8 2-M4 4-φ5.8.

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IGBT MODULE MBN400C33A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. * Isolated head sink (terminal to base). E E G C 2-M8 2-M4 4-φ5.8 TERMINALS Weight: 720 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m MBN400C33A 3,300 ±20 400 800 400 800 4,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 2.
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