MBN400GR12AW Datasheet | Hitachi Semiconductor

IGBT MODU ODULE MBN400GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT EATURES RES - High speed and low saturation voltage. - low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). - Isolated head sink (terminal to base). Weight: 480 (g) TERMINALS ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBN400GS12AW 1,200 ±20 400 800 400 800 2,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.37(14)/2.94(30) 2.94(30) DC 1ms DC 1ms (1) Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting (2) (3) Notes:(1)RMS Current of Diode 120Arms max. (2)Remended Value 1.18/2.45N.m(12/25kgf.cm) (3)Remended Value 2.45N.m(25kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES m A 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES n A ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=400A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =400m A Input Capacitance Cies p F 37,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.25 0.5 VCC=600V ms Turn On Time ton 0.4 0.7 RL=1.5W Switching Times Fall Time tf 0.25 0.35 RG=2.7W (4) 0.75 1.1 VGE=±15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.5 IF=400A,VGE=0V Reverse Recovery Time trr 0.4 IF=400A,VGE=-10V, di/dt=400A/ms ms Junction to case Rth(j-c) °C/W 0.06 Thermal Impedance IGBT 0.14 FWD Rth(j-c) Notes:(4) RG value is the test condition’s value for decision of the switching times, not remended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. PDE-N400GS12AW-0 14V VGE=15V 13V12V Tc=25°C TYPICAL 14V VGE=15V 13V12V Tc=125°C TYPICAL Collector...