Click to expand full text
IGBT MODU ODULE
MBN400GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
E E G
C
Weight: 480 (g)
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.m (kgf.cm)
MBN400GS12AW
1,200 ±20 400 800 400 800 2,000 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 1.37(14)/2.94(30) 2.