2SB1688
2SB1688 is Silicon PNP Transistor manufactured by Hitachi Semiconductor.
Features
- High breakdown voltage VCEO = -300V min
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -300 -300 -5 -50 750 150 -55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector cutoff current Symbol I CBO I CEO Emitter cutoff current Base to emitter voltage DC current transfer raito I EBO VBE h FE Min
- -
- - 80
- Typ
- -
- -
- - Max -0.1 -0.1 -10 -0.75 160 -0.9 Unit µA µA µA V
- V Test Conditions VCB = -300V, IE = 0 VCE = -300V, RBE =∞ VEB = -5 V, IC = 0 VCE = -6V, I C = -1m A VCE = -6V, IC = -2m A I C = -30m A, IB = -3m A
Collector to emitter saturation VCE(sat) voltage
Main Characteristics
Typical Output Characteristics Maximum Collector Dissipation Curve 1.5 Collector Power Dissipation PC (W) -70 µA Collector Current IC (m A) -8 -40 µA -30 µA -20 µA IB = -10 µA Pulse Test 0 50 100 Ambient Temperature Ta (°C) 150 0 -20 -40 -60 -80 -100 Collector to Emitter Voltage VCE (V) -50 µA -10 -60 µA
1.0 -6
-4
0.5 -2
Typical Transfer Characteristics -100 1,000 25°C -10 Ta = 75°C 100 DC Current Transfer Ratio h FE Ta = 75°C Collector Current IC (m A)
DC Current Transfer Ratio vs. Collector Current 25°C -25°C
-1.0 VCE = -6 V Pulse test -0.1 -25°C
10 VCE = -6 V Pulse Test 1 -0.1
-0.01 0 Base to Emitter Voltage VBE (V) -0.2 -0.4 -0.6 -0.8 -1.0
-1.0
-10 Collector Current IC (m A)
-100
Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE (sat) (V) -10 Gain Bandwidth Product f T (MHz) IC/IB = 10 Pulse Test -1.0 Ta = 75°C -0.1 -25°C 25°C 1,000 Gain Bandwidth Product vs. Collector Current VCE = -6 V
-0.01 -0.1
-1.0
-10
-100
1 -0.1
Collector Current IC (m A)
-1.0 -10 Collector Current IC (m...
