2SC1162
2SC1162 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
Low frequency power amplifier plementary pair with 2SA715
Outline
TO-126 MOD
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC
- Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
Ratings 35 35 5 2.5 3 0.75 10 150
- 55 to +150
Unit V V V A A W W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 5
- 1
Typ
- -
- -
- - 0.93 0.5 180
Max
- -
- 20 320
- 1.5 1.0
- Unit V V V µA
Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 35 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A (pulse test)
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE- h FE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) f T
60 20
- -
- V V MHz
VCE = 2 V, IC = 1.5 A (pulse test) I C = 2 A, IB = 0.2 A (pulse test) VCE = 2 V, IC = 0.2 A
1. The 2SC1162 is grouped by h FE as follows. C 100 to 200 D 160 to 320
Maximum Collector Dissipation Curve 0.8 Collector power dissipation PC (W) 0.75 Collector current IC (A) 0.6 5
Area of Safe Operation IC(max)(DC Operation) 2
PC = 10
TC = 25°C
1.0...
