2SC2618 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - Low frequency amplifier - plementary pair with 2SA1121 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 35 35 4 - 1 Typ - - - - - - 0.2 0.64 Max - - - 0.5 320 - 0.6 - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IC = 0 VCE = 3 V, IC = 10 m A (Pulse test) VCE = 3 V, IC = 500 m A (Pulse test) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark h FE1 VCE(sat) VBE 60 10 - - I C = 150 m A, IB = 15 m A (Pulse test) VCE = 3 V, IC = 10 m A (Pulse test) 1. The 2SC2618 is grouped by h FE1 as follows. B RB 60 to 120 C RC 100 to 200 D RD 160 to 320 See characteristic curves of 2SC1213. Maximum Collector Dissipation Curve Collector power dissipation Pc (m W) 150 50 100 150 Ambient Temperature Ta (°C) Unit: mm 0.10...