2SC2735 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF/VHF Local oscillator, frequency converter Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 3 - - 40 - 600 - - - Typ - - - - - - 0.85 1200 210 130 21 Max - - - 0.5 1.0 - 1.5 - - - - p F MHz m V m V d B Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IC = 0 I C = 20 m A, IB = 4 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 m A VCC = 12 V, IC = 7 m A, f OSC = 300 MHz VCC = 12 V, IC = 7 m A, f OSC = 930 MHz VCC = 12 V, IC = 2 m A, f = 200 MHz, f OSC = 230 MHz (0d Bm) VCC = 12 V, IC = 2 m A, f = 200 MHz, f OSC = 230 MHz (0d Bm) Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage V(BR)EBO I CBO VCE(sat) h FE Cob f T VOSC1 VOSC2 Conversion gain CG Noise figure - 6.5 - d B Note: Marking is “JC”. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 200 VCE = 10 V 1 10 20 2 5 Collector Current IC (m A) 50 0 0 100 150 50 Ambient Temperature Ta (°C) Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (p F) 2.0 Gain Bandwidth Product f T (GHz)...