2SC3390 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application - Low frequency low noise amplifier - HF amplifier Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 300 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE- VBE VCE(sat) f T Cob NF Min 55 50 5 - - 100 - - - - - Typ - - - - - - - - 200 - 1.0 Max - - - 0.5 0.5 320 0.75 0.2 - 3.5 5.0 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A V V MHz p F d B VCE = 12 V, IC = 2 m A I C = 10 m A, IB = 1 m A VCE = 12 V, IC = 2 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 m A, Rg = 1 kΩ, f = 1 k Hz 1. The 2SC3390 is grouped by h FE as follows. C 160 to 320 See characteristic curves of 2SC458(LG). Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 50 100 Ambient Temperature Ta...