2SC3391 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Planar Application VHF amplifier, Mixer, Local oscillator Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 20 200 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Power gain Noise figure Note: B 60 to 120 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE- VBE VCE(sat) f T Cob PG NF Min 30 20 4 - 60 - - 450 - 17 - Typ - - - - - 0.72 0.17 940 0.9 20 3.5 Max - - - 0.5 200 - - - 1.2 - 5.5 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 6 V, IC = 1 m A V V MHz p F d B d B VCE = 6 V, IC = 1 m A I C = 20 m A, IB = 4 m A VCE = 6 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 m A, f = 100 MHz VCE = 6 V, IC = 1 m A, Rg = 50 Ω, f = 100 MHz 1. The 2SC3391 is grouped by h FE as follows. C 100 to 200 See characteristic curves of 2SC535. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 50 100 Ambient Temperature Ta...