2SC4463 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Reverse transfer capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) h FE f T Cre Min 30 20 3 - - 60 600 - Typ - - - - - 120 1000 0.35 Max - - - 0.5 1.0 - - 0.65 MHz p F Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 10 V, IE = 0 I C = 20 m A, IB = 4 m A VCE = 10 V, IC = 10 m A VCE = 10 V, IC = 10 m A VCB = 10 V, IE = 0, emitter mon, f = 1 MHz VCC = 12 V, IC = 2 m A, f = 200 MHz f OSC = 230 Mhz (0 d Bm), f out = 30 MHz Conversion gain Noise figure Note: Marking is “HC”. CG NF - - 21 4.0 - - d B d B Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 150 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 200 VCE = 10 V 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (m A) 50 Gain Bandwidth Product vs. Collector Current 2,000 Gain Bandwidth Product f T (MHz) VCE = 10 V Reverse Transfer Capacitance Cre (p F) 5.0 Reverse Transfer Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz Emitter mon 1,600 2.0 1.0...