2SC454 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application High frequency amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 200 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 - - Typ - - - - - - 0.63 - 230 - - 35 Max - - - 0.5 0.5 500 0.75 0.2 - 3.5 25 - Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure IF power gain V(BR)EBO I CBO I EBO h FE- VBE VCE(sat) f T Cob NF IFG - - - - - - V V MHz p F d B d B VCE = 12 V, IC = 2 m A I C = 10 m A, IB = 1 m A VCE = 12 V, IC = 2 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 m A, f = 1 k Hz, Rg = 500 Ω VCE = 12 V, IC = 1 m A, f = 455 k Hz, Rg = 1.5 kΩ, RL = 40 kΩ Note: B 1. The 2SC454 is grouped by h FE as follows. C 160 to 320 D 250 to 500 100 to 200 Small Signal y Parameters (VCE = 12 V, IC = 2m A, Emitter mon) Item Input admittance Symbol yie f 455 k Hz 1MHz Reverse transfer admittance yre 455 k Hz 1MHz Forward transfer admittance yfe 455 k Hz 1MHz Output admittance yoe 455 k Hz 1MHz 2SC454B 0.35 + j0.074 0.35 + j0.130 - j0.005 - j0.013 66 - j2.43...