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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4541
Power Amplifier Applications Power Switching Applications
2SC4541
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 μs (typ.) • Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1736
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC PC (Note 1)
Tj Tstg
80 50 6 3 0.6 500
1000
150 −55 to 150
V V V A A mW
mW
°C °C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.
2SC4541 Datasheet
