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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications Power Switching Applications
2SC4540
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA) • High speed switching time: tstg = 0.4 µs (typ.) • Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1735
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC
(Note)
80 50 6 1 0.2 500
1000
Junction temperature Storage temperature range
Tj 150 Tstg −55 to 150
Note: Mounted on a ceramic substrate (250 mm2 × 0.
2SC4540 Datasheet
