2SC5447 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCES = 1500 V - High speed switching tf = 0.15 µsec (typ.) at f H = 64 k Hz - Isolated package TO- 3PFM Outline TO- 3PFM C 2 1 B 3 E 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 6 8 16 50 150 - 55 to +150 8 Unit V V A A W °C °C A Collector to emitter diode forward current ID Electrical Characteristics (Ta = 25°C) Item Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)EBO ICES h FE1 h FE2 Min 6 - 5 4 - - - - - Typ - - - - - - - 0.2 0.15 Max - 500 25 6 5 1.5 2 0.4 - V V V µs µs Unit V µA Test Conditions IE = 400m A, IC = 0 VCE = 1500V, RBE = 0 VCE = 5 V, IC = 1A VCE = 5 V, IC = 5A IC = 5A, IB = 1.25A IC = 5A, IB = 1.25A IF = 8A ICP = 4A, IB1 = 1.2A f H = 31.5k Hz ICP = 4A, IB1 = 1A f H = 64k Hz Collector to emitter saturation VCE(sat) voltage Base to emitter saturation voltage Collector to emitter diode forward voltage Fall time Fall time VBE(sat) VECF tf tf Main Characteristics Collector Power Dissipation vs. Temperature 80 Collector Power Dissipation Pc (W) 50 20 60 Collector Current I C(A) 10 5 2 1 0.5 0.2 0 50 100 Case Temperature 150 Tc (°C) 200 Area of Safe Operaion 0.1 100 5000 1000 10 Collector to Emitter Voltage V CE(V) L = 180 µH I B2 = - 1 A duty < 1 % Tc =...