2SC5448 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCBO = 1500 V - High speed switching tf = 0.15 µsec (typ.) at f H = 64 k Hz - Isolated package TO- 3PFM Outline TO- 3PFM 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCBO VCEO VEBO IC ic(peak) PC Tj Tstg Note1 Ratings 1500 700 6 10 20 50 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio DC current transfer ratio Symbol V(BR)CEO V(BR)EBO ICES h FE1 h FE2 Min 700 6 - 10 3.5 - - - - Typ - - - - - - - 0.2 0.15 Max - - 500 30 6.5 5 1.5 0.4 - V V µs µs Unit V V µA Test Conditions IC = 10m A, RBE = ∞ IE = 10m A, I C = 0 VCE = 1500V, RBE = 0 VCE = 5 V, I C = 1A VCE = 5 V, I C = 6A IC = 6A, I B = 1.6A IC = 6A, I B = 1.6A ICP = 5A, I B1 = 1.6A f H = 31.5k Hz ICP = 5A, I B1 = 1.3A f H = 64k Hz Collector to emitter saturation VCE(sat) voltage Base to emitter saturation voltage Fall time Fall time VBE(sat) tf tf Main Characteristics Collector Power Dissipation vs. Temperature Pc (W) Area of Safe Operaion 50 I C (A) Collector Current 20 10 5 2 1 0.5 0.2 L = 180 µH I B2 = - 1 A duty < 1 % Tc = 25°C Collector Power...