2SD1163A Datasheet | Hitachi Semiconductor

2SD1163, 2SD1163A Silicon NPN Triple Diffused Application TV horizontal deflection output Outline TO-220AB 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SD1163, 2SD1163A Absolute Maximum Ratings (Ta = 25°C) Rating Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C (peak) I C (surge) PC - Tj Tstg 2SD1163 300 120 6 7 10 20 40 150 - 55 to +150 2SD1163A 350 150 6 7 10 20 40 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) 2SD1163 Item Collector cutoff current Symbol I CBO Min - - Collector to emitter breakdown voltage Emitter to base breakdown voltage V(BR)CEO V(BR)EBO 120 6 25 - - - Typ - - - - - - - - Max 5 - - - - 2.0 1.2 0.5 2SD1163A Min - - 150 6 25 - - - Typ - - - - - - - - Max - 5 - - - 1.0 1.2 0.5 V V µs Unit m A m A V V Test conditions VCB = 300 V, IE = 0 VCB = 350 V, IE = 0 I C = 10 m A, RBE = ∞ I E = 10 m A, IC = 0 VCE = 5 V, IC = 5 A- 1 I C = 5 A, IB = 0.5 A- 1 I C = 5 A, IB = 0.5 A- 1 I CP = 3.5 A, I B1 = 0.45...