2SD1366 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC - Tj Tstg 2 1 Ratings 25 20 5 1 1.5 1 150 - 55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 20 5 - - Typ - - - - Max - - - 0.1 0.1 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V, IC = 0.5 A, Pulse Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark h FE AA 85 to 170 AB 120 to 240 V(BR)EBO I CBO I EBO h FE- - - - - - 0.15 0.9 240 22 240 0.3 1.0 - - V V MHz p F VCE(sat) VBE(sat) f T Cob I C = 0.8 A, IB = 0.08 A, Pulse I C = 0.8 A, IB = 0.08 A, Pulse VCE = 2 V, IC = 0.5 A, Pulse VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1366 is grouped by h FE as follows. Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Typical Output Characteristics 1,000 Collector Current IC (m A) 7 6 5 600 4 3 2 200 1 m A IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 0.4 0.8 1.2 1.4 1.6 Collector to Emitter Voltage VCE...